ALD212900APAL

MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
Lead Time: 62 Days

SKU: ALD212900APAL

Availability: 47 in stock

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MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
Lead Time: 62 Days

Products specifications

Rds On - Drain-Source Resistance	14 Ohms
Pd - Power Dissipation	500 mW
Vgs th - Gate-Source Threshold Voltage	10 mV
Vds - Drain-Source Breakdown Voltage	10 V
Number of Channels	2 Channel
Packaging	Tube
Technology	Si
Id - Continuous Drain Current	79 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Configuration	Dual
Vgs - Gate-Source Voltage	10.6 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Channel Mode	Depletion

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Products specifications

Rds On - Drain-Source Resistance	14 Ohms
Pd - Power Dissipation	500 mW
Vgs th - Gate-Source Threshold Voltage	10 mV
Vds - Drain-Source Breakdown Voltage	10 V
Number of Channels	2 Channel
Packaging	Tube
Technology	Si
Id - Continuous Drain Current	79 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C
Configuration	Dual
Vgs - Gate-Source Voltage	10.6 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Channel Mode	Depletion