MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
Products specifications
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 10 V |
Rds On - Drain-Source Resistance | 25 Ohms |
Pd - Power Dissipation | 500 mW |
Id - Continuous Drain Current | 70 mA |
Minimum Operating Temperature | 0 C |
Maximum Operating Temperature | + 70 C |
Channel Mode | Depletion |
Configuration | Quad |
Technology | Si |
Number of Channels | 4 Channel |
Vgs th - Gate-Source Threshold Voltage | 20 mV |
Packaging | Tube |
Vgs - Gate-Source Voltage | 10.6 V |