ALD110900PAL

MOSFET Dual EPAD(R) N-Ch
Lead Time: 0 Days

SKU: ALD110900PAL

Availability: 15 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

50+

100+

250+

500+

1000+

5000+

Price

R 186.07

R 156.18

R 151.34

R 126.29

R 122.52

R 112.02

R 90.48

R 88.32

Free shipping

MOSFET Dual EPAD(R) N-Ch
Lead Time: 0 Days

Products specifications

Pd - Power Dissipation	500 mW
Vgs - Gate-Source Voltage	10.6 V
Minimum Operating Temperature	0 C
Transistor Polarity	N-Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	10 V
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	20 mV
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	12 mA
Maximum Operating Temperature	+ 70 C
Channel Mode	Depletion
Rds On - Drain-Source Resistance	500 Ohms, 500 Ohms
Number of Channels	2 Channel

Your name *

Your email *

Enquiry *

Products specifications

Pd - Power Dissipation	500 mW
Vgs - Gate-Source Voltage	10.6 V
Minimum Operating Temperature	0 C
Transistor Polarity	N-Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	10 V
Configuration	Dual
Vgs th - Gate-Source Threshold Voltage	20 mV
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	12 mA
Maximum Operating Temperature	+ 70 C
Channel Mode	Depletion
Rds On - Drain-Source Resistance	500 Ohms, 500 Ohms
Number of Channels	2 Channel