ALD110900APAL

MOSFET Dual EPAD(R) N-Ch
Lead Time: 21 Days

SKU: ALD110900APAL

Availability: 6 in stock

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MOSFET Dual EPAD(R) N-Ch
Lead Time: 21 Days

Products specifications

Minimum Operating Temperature	0 C
Configuration	Dual
Rds On - Drain-Source Resistance	500 Ohms, 500 Ohms
Number of Channels	2 Channel
Technology	Si
Channel Mode	Depletion
Maximum Operating Temperature	+ 70 C
Vds - Drain-Source Breakdown Voltage	10 V
Id - Continuous Drain Current	12 mA
Vgs - Gate-Source Voltage	10.6 V
Vgs th - Gate-Source Threshold Voltage	10 mV
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Packaging	Tube
Pd - Power Dissipation	500 mW

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Products specifications

Minimum Operating Temperature	0 C
Configuration	Dual
Rds On - Drain-Source Resistance	500 Ohms, 500 Ohms
Number of Channels	2 Channel
Technology	Si
Channel Mode	Depletion
Maximum Operating Temperature	+ 70 C
Vds - Drain-Source Breakdown Voltage	10 V
Id - Continuous Drain Current	12 mA
Vgs - Gate-Source Voltage	10.6 V
Vgs th - Gate-Source Threshold Voltage	10 mV
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Packaging	Tube
Pd - Power Dissipation	500 mW