MOSFET Dual P&N-Ch. Pair
Lead Time: 0 Days
Products specifications
Technology | Si |
Packaging | Tube |
Rds On - Drain-Source Resistance | 350 Ohms, 1.2 kOhms |
Vds - Drain-Source Breakdown Voltage | 12 V |
Minimum Operating Temperature | 0 C |
Maximum Operating Temperature | + 70 C |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 10.6 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 4.8 mA, 2 mA |
Vgs th - Gate-Source Threshold Voltage | 400 mV |
Transistor Polarity | N-Channel, P-Channel |
Configuration | Quad |
Number of Channels | 4 Channel |