MOSFET THERMAL. ENHANCED COMP. 200V N & P CH. MOSFET PAIR
Products specifications
Maximum Operating Temperature | + 150 C |
Technology | Si |
Pd - Power Dissipation | - |
Vds - Drain-Source Breakdown Voltage | 200 V |
Number of Channels | 2 Channel |
Channel Mode | Enhancement |
Qg - Gate Charge | - |
Packaging | Cut Tape, Reel |
Id - Continuous Drain Current | 2 A |
Vgs th - Gate-Source Threshold Voltage | 1 V, 2.4 V |
Rds On - Drain-Source Resistance | 7 Ohms, 8 Ohms |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel, P-Channel |
Minimum Operating Temperature | - 40 C |
Configuration | Dual |