IGBT Modules 1700V 300A IGBT
Products specifications
Collector- Emitter Voltage VCEO Max | 1700 V |
Gate-Emitter Leakage Current | 400 nA |
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 1650 W |
Collector-Emitter Saturation Voltage | 2 V |
Product | IGBT Silicon Modules |
Configuration | Half Bridge |
Continuous Collector Current at 25 C | 375 A |