IGBT Modules 1700V 200A IGBT
Products specifications
Collector-Emitter Saturation Voltage | 2 V |
Pd - Power Dissipation | 1250 W |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 1700 V |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Configuration | Half Bridge |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 300 A |
Packaging | Bulk |