IGBT Modules 1700V 150A IGBT
Products specifications
Configuration | Half Bridge |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 400 nA |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 890 W |
Collector-Emitter Saturation Voltage | 2 V |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |
Continuous Collector Current at 25 C | 250 A |
Collector- Emitter Voltage VCEO Max | 1700 V |