IGBT Modules 1200V 75A IGBT
Products specifications
Configuration | 3-Phase Inverter |
Collector-Emitter Saturation Voltage | 1.9 V |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 1200 V |
Product | IGBT Silicon Modules |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |
Continuous Collector Current at 25 C | 105 A |
Pd - Power Dissipation | 368 W |
Minimum Operating Temperature | - 40 C |