IGBT Modules 1200V 75A Dual
Products specifications
Configuration | Dual |
Gate-Emitter Leakage Current | 100 nA |
Pd - Power Dissipation | 630 W |
Packaging | Bulk |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current at 25 C | 105 A |
Collector-Emitter Saturation Voltage | 1.8 V |
Collector- Emitter Voltage VCEO Max | 1200 V |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |