IGBT Modules 1200 V 600 A IGBT
Products specifications
Gate-Emitter Leakage Current | 400 nA |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 1200 V |
Packaging | Bulk |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2500 W |
Collector-Emitter Saturation Voltage | 2 V |
Continuous Collector Current at 25 C | 750 A |
Configuration | Dual |