MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ
Lead Time: 84 Days
Products specifications
Vgs - Gate-Source Voltage | 5 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 2.8 A |
Transistor Polarity | N-Channel |
Technology | Si |
Tradename | IntelliFET |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 700 mV |
Pd - Power Dissipation | 2.13 W |
Configuration | Dual |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 75 mOhms, 75 mOhms |
Number of Channels | 2 Channel |