MOSFETs 60V P-Channel 6.8A MOSFET
Lead Time: 56 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | 44 nC |
Rds On - Drain-Source Resistance | 55 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 10.1 W |
Transistor Polarity | P-Channel |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 10.4 A |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 1 Channel |
Technology | Si |
Channel Mode | Enhancement |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |