MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A
Products specifications
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Id - Continuous Drain Current | 2.7 A |
Pd - Power Dissipation | 1.56 W |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 125 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 9 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |