MOSFETs Dl 60V P-Chnl UMOS
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 17.7 nC |
Configuration | Dual |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 3.2 A |
Transistor Polarity | P-Channel |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 2 Channel |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.15 W |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 190 mOhms |