MOSFETs P-Chan 60V MOSFET (UMOS)
Lead Time: 56 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Id - Continuous Drain Current | 8.2 A |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Pd - Power Dissipation | 9.76 W |
Rds On - Drain-Source Resistance | 85 mOhms |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Qg - Gate Charge | 24.2 nC |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, MouseReel, Reel |