MOSFET 60V P-Chnl UMOS
Lead Time: 84 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Pd - Power Dissipation | 806 mW |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 600 mOhms |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 4.5 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 5.9 nC |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 1.1 A |
Configuration | Single |