MOSFETs 30V P Chnl UMOS
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 29.6 nC |
Rds On - Drain-Source Resistance | 45 mOhms |
Pd - Power Dissipation | 3.9 W |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 7.5 A |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |