MOSFET 30V P-Chnl UMOS
Lead Time: 84 Days
Products specifications
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 210 mOhms |
Pd - Power Dissipation | 806 mW |
Qg - Gate Charge | 6.4 nC |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | P-Channel |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Configuration | Single |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 1.6 A |