MOSFET 200V 200mA P-Channel Enhancement MOSFET
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 200 V |
Configuration | Single |
Pd - Power Dissipation | 2 W |
Id - Continuous Drain Current | 200 mA |
Rds On - Drain-Source Resistance | 25 Ohms |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |