MOSFETs P-Ch 100 Volt 5.2A
Lead Time: 56 Days
Products specifications
Rds On - Drain-Source Resistance | 150 mOhms |
Channel Mode | Enhancement |
Technology | Si |
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 10.2 W |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 26.9 nC |
Transistor Polarity | P-Channel |
Id - Continuous Drain Current | 5.9 A |