MOSFET 100V P-Chnl UMOS
Lead Time: 56 Days
Products specifications
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 150 mOhms |
Number of Channels | 1 Channel |
Technology | Si |
Pd - Power Dissipation | 3.9 W |
Configuration | Single |
Transistor Polarity | P-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 3.7 A |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 26.9 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |