MOSFETs P-Chan 100V MOSFET (UMOS)
Lead Time: 56 Days
Products specifications
Id - Continuous Drain Current | 4.6 A |
Qg - Gate Charge | 16.5 nC |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 235 mOhms |
Technology | Si |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 9.76 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 100 V |
Transistor Polarity | P-Channel |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |