MOSFETs P-Ch 100 Volt 0.7A
Lead Time: 56 Days
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Pd - Power Dissipation | 806 mW |
Vds - Drain-Source Breakdown Voltage | 100 V |
Qg - Gate Charge | 3.5 nC |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 700 mA |
Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | P-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Single |
Number of Channels | 1 Channel |