MOSFET 60V N-Chnl UMOS
Lead Time: 56 Days
Products specifications
Configuration | Single |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 2.6 W |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | 5.7 nC |
Id - Continuous Drain Current | 3.6 A |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 120 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |