MOSFETs 60V N-Chnl UMOS
Lead Time: 56 Days
Products specifications
Rds On - Drain-Source Resistance | 120 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Id - Continuous Drain Current | 4.4 A |
Channel Mode | Enhancement |
Pd - Power Dissipation | 3.9 W |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 5.7 nC |
Configuration | Single |