MOSFETs 60V 3.8A N-Channel MOSFET
Lead Time: 112 Days
Products specifications
Technology | Si |
Id - Continuous Drain Current | 5.3 A |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 80 mOhms |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 5.8 nC |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Pd - Power Dissipation | 3.9 W |