MOSFETs 30V Dual N-Channel Enhance. Mode MOSFET
Lead Time: 56 Days
Products specifications
Rds On - Drain-Source Resistance | 28 mOhms |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 7.1 A |
Technology | Si |
Transistor Polarity | N-Channel |
Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Dual |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 2.1 W |
Packaging | Cut Tape, MouseReel, Reel |