MOSFETs 30V Dual N-channel Enhance. Mode MOSFET
Lead Time: 56 Days
Products specifications
Configuration | Dual |
Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 7.3 A |
Pd - Power Dissipation | 2.1 W |
Number of Channels | 2 Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Technology | Si |