MOSFETs 30V N-Channel Enhance. Mode MOSFET
Lead Time: 56 Days
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Rds On - Drain-Source Resistance | 47 mOhms |
Vds - Drain-Source Breakdown Voltage | 30 V |
Channel Mode | Enhancement |
Technology | Si |
Configuration | Single |
Id - Continuous Drain Current | 4.6 A |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 1.4 W |
Transistor Polarity | N-Channel |