MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS
Products specifications
Configuration | Dual |
Id - Continuous Drain Current | 3.7 A |
Vds - Drain-Source Breakdown Voltage | 30 V |
Number of Channels | 2 Channel |
Rds On - Drain-Source Resistance | 120 mOhms |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 2.45 W |
Technology | Si |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 3.9 nC |
Packaging | Cut Tape, MouseReel, Reel |