MOSFETs 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
Lead Time: 56 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V |
Id - Continuous Drain Current | 3.3 A |
Pd - Power Dissipation | 970 mW |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Qg - Gate Charge | 5 nC |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 120 mOhms |
Vds - Drain-Source Breakdown Voltage | 30 V |
Packaging | Cut Tape, MouseReel, Reel |