MOSFETs 30V N-Chnl UMOS
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 3.5 nC |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 2 A |
Pd - Power Dissipation | 625 mW |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 120 mOhms |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 10 V |
Packaging | Cut Tape, MouseReel, Reel |