MOSFETs 20V N-Channel Enhance. Mode MOSFET
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 2.8 nC |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Rds On - Drain-Source Resistance | 60 mOhms |
Vds - Drain-Source Breakdown Voltage | 20 V |
Configuration | Single |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 950 mW |
Id - Continuous Drain Current | 4 A |
Vgs th - Gate-Source Threshold Voltage | 500 mV |
Vgs - Gate-Source Voltage | 4.5 V |