MOSFETs 20V N-Channel Enhance. Mode MOSFET
Lead Time: 56 Days
Products specifications
Id - Continuous Drain Current | 4.9 A |
Qg - Gate Charge | - |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 600 mV |
Rds On - Drain-Source Resistance | 45 mOhms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 1.4 W |
Technology | Si |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Vgs - Gate-Source Voltage | 12 V |
Vds - Drain-Source Breakdown Voltage | 20 V |