MOSFETs 20V N-Channel MOSFET w/low gate drive cap
Lead Time: 56 Days
Products specifications
Qg - Gate Charge | 4.8 nC |
Vds - Drain-Source Breakdown Voltage | 20 V |
Technology | Si |
Rds On - Drain-Source Resistance | 100 mOhms |
Vgs - Gate-Source Voltage | 4.5 V |
Id - Continuous Drain Current | 2.4 A |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 806 mW |
Vgs th - Gate-Source Threshold Voltage | 400 mV |