MOSFET 20V DUAL N-CH ENH 12V VGS 3.7 IDS
Products specifications
Vgs th - Gate-Source Threshold Voltage | 700 mV |
Rds On - Drain-Source Resistance | 85 mOhms, 85 mOhms |
Configuration | Dual |
Vgs - Gate-Source Voltage | 12 V |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 1.5 W |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 3.7 A |
Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Technology | Si |
Channel Mode | Enhancement |
Qg - Gate Charge | 3.1 nC, 3.1 nC |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |