MOSFETs N Channel
Lead Time: 182 Days
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 110 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 1 W |
Vgs - Gate-Source Voltage | 12 V |
Configuration | Single |
Id - Continuous Drain Current | 4.1 A |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |