MOSFETs ENHANCE MODE MOSFET 200V N-CHANNEL
Lead Time: 56 Days
Products specifications
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 750 mOhms |
Qg - Gate Charge | 8.1 nC |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.3 A |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 4.3 W |
Technology | Si |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |