MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 4.2 W |
Qg - Gate Charge | 6.6 nC |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Rds On - Drain-Source Resistance | 650 mOhms |
Vgs - Gate-Source Voltage | 25 V |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 150 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 2.6 A |