MOSFETs N-Chan 100V MOSFET (UMOS)
Lead Time: 56 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 4 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 350 mOhms |
Channel Mode | Enhancement |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 100 V |
Pd - Power Dissipation | 8.5 W |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 3.5 A |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 5.4 nC |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |