MOSFETs 100V N-Chnl UMOS
Lead Time: 56 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 350 mOhms |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 2.4 A |
Qg - Gate Charge | 5.4 nC |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |