MOSFETs 100V N-Channel 2A MOSFET
Lead Time: 140 Days
Products specifications
Technology | Si |
Pd - Power Dissipation | 2 W |
Rds On - Drain-Source Resistance | 250 mOhms |
Vds - Drain-Source Breakdown Voltage | 100 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 7.7 nC |
Id - Continuous Drain Current | 2.9 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Channel Mode | Enhancement |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 10 V |