MOSFETs 100V 2.1A N-Channel Enhancement MOSFET
Lead Time: 56 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Number of Channels | 2 Channel |
Vgs - Gate-Source Voltage | 20 V |
Configuration | Dual |
Pd - Power Dissipation | 1.8 W |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 2.1 A |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 250 mOhms |
Channel Mode | Enhancement |