MOSFETs 100V N-Chnl UMOS
Lead Time: 56 Days
Products specifications
Rds On - Drain-Source Resistance | 700 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Pd - Power Dissipation | 806 mW |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 2.9 nC |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 100 V |
Transistor Polarity | N-Channel |
Technology | Si |
Number of Channels | 1 Channel |
Configuration | Single |
Id - Continuous Drain Current | 800 mA |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |