MOSFET 60V 1.6A N-Channel MOSFET H-Bridge
Products specifications
Transistor Polarity | N-Channel |
Qg - Gate Charge | 3.2 nC |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 300 mOhms |
Configuration | Quad |
Id - Continuous Drain Current | 1.6 A |
Channel Mode | Enhancement |
Number of Channels | 4 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Pd - Power Dissipation | 1.6 W |