MOSFETs 60V UMOS H-Bridge
Lead Time: 56 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 300 mOhms, 425 mOhms |
Configuration | Quad |
Id - Continuous Drain Current | 1.8 A, 1.5 A |
Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 4 Channel |
Qg - Gate Charge | 3.2 nC, 5.1 nC |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 1.3 W |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1 V |