MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A
Lead Time: 56 Days
Products specifications
Number of Channels | 4 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Quad |
Transistor Polarity | N-Channel, P-Channel |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Rds On - Drain-Source Resistance | 250 mOhms, 400 mOhms |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 3.2 nC, 5.7 nC |
Pd - Power Dissipation | 0.87 W |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 60 V |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 1.8 A, 1.42 A |