MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9
Lead Time: 56 Days
Products specifications
Id - Continuous Drain Current | 1 A, 850 mA |
Vds - Drain-Source Breakdown Voltage | 100 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 2.9 nC, 3.5 nC |
Transistor Polarity | N-Channel, P-Channel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Configuration | Quad |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 700 mOhms, 1.45 Ohms |
Pd - Power Dissipation | 870 mW |
Technology | Si |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 4 Channel |